Negative capacitance FinFET device and manufacturing method of the same
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United States of America Patent
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Nov 28, 2017
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N/A
app pub date -
Mar 31, 2017
filing date -
Dec 30, 2016
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Abstract
Provided is a negative capacitance FinFET device including a FinFET device including a gate stack, a drain electrode and a source electrode formed on a substrate and a ferroelectric negative capacitor connected to the gate stack of the FinFET device and having a negative capacitance. The FinFET device has an extension length (Lext) from a side-wall of the gate stack to the drain electrode or the source electrode and the extension length is set such that a size of a hysteresis window in the negative capacitance FinFET device is 1 V or less.
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