Semiconductor device, and alternator and power converter using the semiconductor device
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United States of America Patent
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Nov 28, 2017
Issued Date -
N/A
app pub date -
Aug 19, 2015
filing date -
Sep 11, 2014
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.

First Claim
Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
International Classification(s)

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- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ishimaru, Tetsuya | Tokyo, JP | 54 | 800 |
Kurita, Shinichi | Hitachi, JP | 190 | 6437 |
Mori, Mutsuhiro | Tokyo, JP | 113 | 1918 |
Onda, Kohhei | Tokyo, JP | 5 | 42 |
Sakano, Junichi | Tokyo, JP | 48 | 349 |
Sugayama, Shigeru | Hitachi, JP | 6 | 53 |
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