Composition and process for selectively etching metal nitrides

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United States of America Patent

PATENT NO 9831088
APP PUB NO 20140038420A1
SERIAL NO

13877777

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Abstract

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A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

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Patent Owner(s)

Patent OwnerAddress
MORGAN STANLEY SENIOR FUNDING INC1300 THAMES STREET 4TH FLOOR BALTIMORE MD 21231

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Barnes, Jeffrey A Bethlehem, US 26 586
Chen, Tianniu Rocky Hill, US 68 1123
Cooper, Emanuel I Scarsdale, US 71 1001
Lippy, Steven Brookfield, US 13 325
Thomas, Nicole E Marlborough, US 3 84
Zhang, Peng Montvale, US 846 8792

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