Ion implantation compositions, systems, and methods
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United States of America Patent
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Nov 28, 2017
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Mar 3, 2014
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Mar 5, 2013
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Abstract
Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.
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