Apparatus and process for producing a single crystal of silicon
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United States of America Patent
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Nov 28, 2017
Grant Date -
Oct 15, 2015
app pub date -
Mar 27, 2015
filing date -
Apr 14, 2014
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Abstract
An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate;
- a device for metering granular silicon onto the plate;a first induction heating coil above the plate, provided for melting of the granular silicon deposited;a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, the distance between the elevations in a radial direction being not less than 2 mm and not more than 15 mm.
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