Room temperature tunneling switches and methods of making and using the same
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United States of America Patent
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Nov 21, 2017
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Nov 28, 2012
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Nov 28, 2011
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Abstract
The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.
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