Metal oxide thin film transistor
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United States of America Patent
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Nov 21, 2017
Grant Date -
Dec 10, 2015
app pub date -
Aug 13, 2015
filing date -
Oct 7, 2011
priority date (Note) -
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Abstract
A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.
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