Deposition method and focused ion beam system

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United States of America Patent

PATENT NO 9824856
APP PUB NO 20160163507A1
SERIAL NO

14956725

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Abstract

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A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

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Patent Owner(s)

Patent OwnerAddress
JEOL LTD3-1-2 MUSASHINO AKISHIMA TOKYO 196-8558

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kadoi, Misumi Tokyo, JP 2 0

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