Semiconductor device having air-gap
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United States of America Patent
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Nov 21, 2017
Grant Date -
Sep 15, 2016
app pub date -
May 25, 2016
filing date -
Mar 17, 2014
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Abstract
A semiconductor device includes a bit line structure located on a semiconductor substrate, an outer bit line spacer located on a first side surface of the bit line structure, an inner bit line spacer including a first part located between the bit line structure and the outer bit line spacer and a second part located between the semiconductor substrate and the outer bit line spacer, and a block bit line spacer located between the outer bit line spacer and the second part of the inner bit line spacer. A first air-gap is defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer.
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