Semiconductor testing structures and semiconductor testing apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9823271
APP PUB NO 20170016934A1
SERIAL NO

15280777

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Abstract

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A method is provided for fabricating a semiconductor testing structure. The method includes providing a substrate having a to-be-tested device structure formed on a surface of the substrate, a dielectric layer formed on the surface of the substrate and a surface of the to-be-tested structure, and conductive structures and an insulation layer electrically insulating the conductive structures formed on a first surface of the dielectric layer. The method also includes planarizing the conductive structures and the insulation layer to remove the conductive structures and the insulation layer until the first surface of the dielectric layer is exposed; and bonding the first surface of the dielectric layer with a dummy wafer by an adhesive layer. Further, the method includes removing the substrate to expose a second surface relative to the first surface of the dielectric layer of the dielectric layer and a surface of the to-be-tested device structure.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION100176 BEIJING BEIJING DAXING DISTRICT ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE (YIZHUANG) 18 WENCHANG AVENUE MUNICIPAL DISTRICT BEIJING CITY 100176

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lai, Lilung Shanghai, CN 3 3
Li, Nan Shanghai, CN 342 1421
Zhu, Ling Shanghai, CN 74 230

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