Organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and preparation method thereof

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United States of America Patent

PATENT NO 9818963
SERIAL NO

15581739

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Abstract

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The invention discloses an organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and a preparation method thereof. The preparation method comprises the following steps of 1) cleaning the ITO glass substrate; 2) forming a phosphonic acid or trichlorosilane modified layer; 3) forming an organic coating film layer; and 4) forming an electrode, and finally obtaining the organic electric memory device. By adoption of the method, a series of sandwich-type organic electric memory devices are prepared; meanwhile, the preparation method is simple, convenient, fast, and easy to operate; compared with the conventional device, the turn-on voltage of the organic electric memory device is lowered, the yield of the multi-level system is improved, and the problem of relatively low ternary productivity at present is solved; and therefore, the organic electric memory device has extremely high application value in the future memory fields.

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  • SOOCHOW UNIVERSITY

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  • 2017 Application Filing Year
  • H01L Class
  • 30754 Applications Filed
  • 25260 Patents Issued To-Date
  • 82.14 % Issued To-Date
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Inventor Name Address # of filed Patents Total Citations
He, Jinghui Suzhou, CN 6 4
Lu, Jianmei Suzhou, CN 59 24

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