Oxide TFT, preparation method thereof, array substrate, and display device
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United States of America Patent
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Nov 14, 2017
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app pub date -
Jul 2, 2013
filing date -
Mar 1, 2013
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Abstract
An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.
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