Self-referenced memory device and method using spin-orbit torque for reduced size
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United States of America Patent
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Nov 14, 2017
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Sep 8, 2014
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Sep 19, 2013
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Abstract
A self-referenced MRAM cell comprises a first portion of a magnetic tunnel junction including a storage layer; a second portion of the magnetic tunnel junction portion including a tunnel barrier layer, a sense layer and a seed layer; the seed layer comprising a material having high spin-orbit coupling such that passing a sense current along the plane of the sense layer and/or seed layer exerts a spin-orbit torque adapted for switching a sense magnetization of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed.
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