Voltage-tunable magnetic devices for communication applications

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United States of America Patent

PATENT NO 9817088
SERIAL NO

15075088

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Abstract

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Magnetic devices and methods for forming a magnetic device are disclosed. The magnetic device includes a MTJ element. The MTJ element has first and second MTJ terminals which include first and second electrodes. The free layer of the MTJ element includes a natural precessional frequency which undergoes Rabi oscillation in the presence of a radio frequency (RF) matching the natural precessional frequency. A strain induced magnetoelectric (SIM) unit contacts one of the electrodes proximate to the free layer of the MTJ element while a digital line is coupled to the SIM unit. A desired voltage is provided on the digital line to cause the SIM unit to produce a desired strain on the electrode proximate to the free layer to tune the precessional frequency of the free layer to a desired precessional frequency for detecting a desired RF by the magnetic device. The desired RF causes a change in current through the MTJ element due to Rabi oscillation.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Datta, Deepanjan Singapore, SG 5 25
Kota, Murali V R M Clifton Park, US 3 10
Naik, Vinayak Bharat Singapore, SG 35 293

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