Single crystal diamond

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United States of America Patent

PATENT NO 9816202
APP PUB NO 20170037539A1
SERIAL NO

15298380

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Abstract

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A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

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Patent Owner(s)

Patent OwnerAddress
ELEMENT SIX TECHNOLOGIES LIMITEDDIDCOT OXFORDSHIRE OX11 0QR

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Martineau, Philip Maurice Didcot, GB 34 496
Scarsbrook, Geoffrey Alan Didcot, GB 71 1034
Twitchen, Daniel James Didcot, GB 71 1396

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