Block copolymer and associated photoresist composition and method of forming an electronic device
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United States of America Patent
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Nov 14, 2017
Grant Date -
Feb 9, 2017
app pub date -
Aug 7, 2015
filing date -
Aug 7, 2015
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Abstract
A block copolymer useful in electron beam and extreme ultraviolet photolithography includes a first block with units derived from a base-solubility-enhancing monomer and an out-of-band absorbing monomer, and a second block having a low surface energy. Repeat units derived from the out-of-ban absorbing monomer allow the copolymer to absorb significantly in the wavelength range 150 to 400 nanometers. When incorporated into a photoresist composition with a photoresist random polymer, the block copolymer self-segregates to form a top layer that effectively screens out-of-band radiation.
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