Static random-access memory (SRAM) sensor for bias temperature instability

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United States of America Patent

PATENT NO 9812188
APP PUB NO 20160247554A1
SERIAL NO

14631603

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Abstract

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An apparatus includes a static random-access memory and circuitry configured to initiate a corrective action associated with the static random-access memory. The corrective action may be initiated based on a number of static random-access memory cells that have a particular state responsive to a power-up of the static random-access memory.

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Patent Owner(s)

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QUALCOMM INCORPORATED5775 MOREHOUSE DRIVE SAN DIEGO CA 92121-1714

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Xiaonan San Diego, US 34 301
Mojumder, Niladri Narayan San Diego, US 24 228
Song, Stanley Seungchul San Diego, US 134 1131
Wang, Zhongze San Diego, US 157 1589
Yeap, Choh Fei San Diego, US 123 1217

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