Methods for top-down fabrication of wafer scale TMDC monolayers
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United States of America Patent
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Nov 7, 2017
Grant Date -
Sep 7, 2017
app pub date -
Mar 4, 2016
filing date -
Mar 4, 2016
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Abstract
A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.
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