Stress control on thin silicon substrates
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United States of America Patent
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Oct 31, 2017
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app pub date -
Nov 30, 2015
filing date -
Nov 30, 2015
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Abstract
Methods for stress control in thin silicon (Si) wafer-based semiconductor materials. By a specific interrelation of process parameters (e.g., temperature, reactant supply, time), a highly uniform nucleation layer is formed on the Si substrate that mitigates and/or better controls the stress (tensile and compressive) in subsequent layers formed on the thin Si substrate.
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