Memory element with a reactive metal layer
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United States of America Patent
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Oct 31, 2017
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app pub date -
Dec 29, 2016
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Feb 6, 2004
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Abstract
A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.
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