Metal oxide semiconductor thin film, thin film transistor, and their fabricating methods, and display apparatus
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United States of America Patent
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Oct 31, 2017
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Dec 10, 2015
filing date -
Jul 1, 2015
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Abstract
A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.
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