Semiconductor memory device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 31, 2017
Grant Date -
Mar 23, 2017
app pub date -
Nov 30, 2016
filing date -
Sep 4, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of controlling a magnetoresistive random access memory includes receiving first signals associated with an active state through command/address pins; then receiving second signals associated with column and row addresses for a read operation, through the command/address pins, and in response reading data from a memory cell according to the row address; receiving third signals associated with column and row addresses for a write operation through the command/address pins, while reading the data; outputting the read data to data input/output pins, according to the column address for the read operation, after a lapse of a read latency; inputting data through the data input/output pins, in response to the third signals, according to the column address for the write operation, after a lapse of a write latency; and writing the data inputted from the data input/output pins to a memory cell according to the row address for the write operation.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully