Nonvolatile memory with magnetoresistive element and transistor
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United States of America Patent
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Oct 31, 2017
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Sep 16, 2016
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Sep 19, 2014
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Abstract
A nonvolatile memory of an embodiment includes: first through fifth wirings; and a memory cell including: a first circuit including a first magnetoresistive element and a first select transistor, the first magnetoresistive element and the first select transistor being electrically connected in series, the first magnetoresistive element including a first reference layer, a first storage layer, and a first nonmagnetic layer between the first reference layer and the first storage layer; a second circuit including a second magnetoresistive element and a second select transistor, the second magnetoresistive element and the second select transistor being electrically connected in series, the second magnetoresistive element including a second reference layer, a second storage layer, and a second nonmagnetic layer between the second reference layer and the second storage layer; a third circuit including first and second transistors; and a fourth circuit including third and fourth transistors.
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