Three-dimensional (3D) non-volatile semiconductor memory device for loading improvement
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United States of America Patent
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Oct 31, 2017
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app pub date -
Jun 26, 2015
filing date -
Mar 17, 2015
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Abstract
A three-dimensional (3D) non-volatile semiconductor memory device is disclosed. The three-dimensional (3D) non-volatile semiconductor memory device includes: a cell region having a plurality of memory cells; a page buffer formed to store data of the cell region in units of a page; a decoder formed below the cell region, configured to provide a word line voltage to word lines of the cell region; a first upper line formed above the cell region, configured to transfer the word line voltage; a lower interconnection structure formed below the cell region, configured to transfer the word line voltage to the decoder; and a first via disposed between the cell region and the page buffer, configured to couple the first upper line to the lower interconnection structure.
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