Method for producing group III-nitride wafers and group III-nitride wafers
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United States of America Patent
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Oct 31, 2017
Issued Date -
N/A
app pub date -
Feb 25, 2009
filing date -
Feb 25, 2008
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The present invention discloses a production method for group III nitride ingots or pieces such as wafers. To solve the coloration problem in the wafers grown by the ammonothermal method, the present invention composed of the following steps; growth of group III nitride ingots by the ammonothermal method, slicing of the ingots into wafers, annealing of the wafers in a manner that avoids dissociation or decomposition of the wafers. This annealing process is effective to improve transparency of the wafers and/or otherwise remove contaminants from wafers.
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International Classification(s)
- 2009 Application Filing Year
- C30B Class
- 268 Applications Filed
- 206 Patents Issued To-Date
- 76.87 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- C30B Class
- 25.93 % this patent is cited more than
- 8 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Apr 30, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Apr 30, 2029 |
