Crucible for growing sapphire single crystal, and method for producing crucible for growing sapphire single crystal

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United States of America Patent

PATENT NO 9803291
SERIAL NO

14430591

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Abstract

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An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.

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Patent Owner(s)

Patent OwnerAddress
A L M T CORPTOKYO TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Katoh, Masahiro Toyama, JP 46 316
Watanabe, Makoto Toyama, JP 386 3408

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