Deposition of silicon dioxide

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United States of America Patent

PATENT NO 9803272
SERIAL NO

14532098

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Abstract

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According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.

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Patent Owner(s)

Patent OwnerAddress
SPTS TECHNOLOGIES LIMITEDCOED RHEDYN RINGLAND WAY NEWPORT NP18 2TA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Burgess, Stephen R Gwent, GB 19 150
Hyndman, Rhonda Newport, GB 13 16
Zhou, Yun Cardiff, GB 107 294

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