Semiconductor laser device and manufacturing method of the same
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United States of America Patent
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Oct 24, 2017
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app pub date -
Apr 24, 2015
filing date -
Apr 25, 2014
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Abstract
A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
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