Method for forming a thin-film transistor
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United States of America Patent
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Oct 24, 2017
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app pub date -
Oct 31, 2016
filing date -
Oct 31, 2016
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Abstract
A method of forming a thin-film transistor includes providing a substrate having a top surface and a recess in the top surface. An electrically conductive gate is provided within the recess. A conformal insulating material layer and a conformal semiconductor material layer are formed in the recess, with the semiconductor material layer extending over the top surface of the substrate outside of the recess. Source and drain electrodes are formed by adding a deposition inhibitor material on a portion of the substrate including within the recess; and depositing a thin-film of electrically conductive material, wherein the deposition inhibitor material inhibits the deposition of the electrically conductive material such that the electrically conductive material is patterned by the deposition inhibitor material during deposition, wherein the patterned electrically conductive material provides the source electrode on a first side of the recess and the drain electrode on a second side of the recess.
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