Tritium direct conversion semiconductor device for use with gallium arsenide or germanium substrates
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United States of America Patent
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Oct 24, 2017
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Feb 17, 2015
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Feb 17, 2014
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Abstract
A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.
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