Systems for crystal growth utilizing furnaces, ampoules, and crucibles
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United States of America Patent
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Oct 24, 2017
Grant Date -
May 5, 2016
app pub date -
Oct 30, 2015
filing date -
Nov 30, 2011
priority date (Note) -
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Abstract
A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.
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