Polishing composition and method using said polishing composition to manufacture compound semiconductor substrate
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United States of America Patent
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Oct 24, 2017
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app pub date -
Mar 4, 2013
filing date -
Mar 5, 2012
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Abstract
A polishing composition contains abrasive grains and water. 50% by mass or more of the abrasive grains consists of particles A having particle sizes between 40 nm and 80 nm inclusive, and 10% by mass or more of the abrasive grains consists of particles B having particle sizes between 150 nm and 300 nm inclusive. The polishing composition is used to polish a surface of a compound semiconductor substrate.
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