Field effect transistor

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United States of America Patent

PATENT NO 9796727
APP PUB NO 20110303910A1
SERIAL NO

13203494

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Abstract

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A heterocyclic compound represented by formula (1) and a field effect transistor having a semiconductor layer comprising the compound. (In the formula, X1 and X2 each independently represents a sulfur atom or a selenium atom, and R1 and R2 each independently represents a C5-16 alkyl.)

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Patent Owner(s)

Patent OwnerAddress
NIPPON KAYAKU KABUSHIKI KAISHAWITHIN JAPAN TOKYO CHIYODA PILL TWO CHOME 1 NO 1 TOKYO TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikeda, Masaaki Tokyo, JP 98 1208
Kuwabara, Hirokazu Tokyo, JP 60 214
Takimiya, Kazuo Higashihiroshima, KR 23 178

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