MEMS capacitive sensor biasing circuit including an integrated inductor
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United States of America Patent
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Oct 17, 2017
Issued Date -
Nov 22, 2012
app pub date -
May 18, 2011
filing date -
May 18, 2011
priority date (Note) -
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Abstract
A MEMS capacitive sensor biasing circuit. The circuit includes a high-voltage (HV) NMOS switch, an inductor, a diode, and a capacitor. The HV NMOS switch has a source coupled to ground. The inductor has a first node coupled to a drain of the HV NMOS switch, and a second node coupled to a DC power source supplying a first DC voltage. The diode has an anode coupled to the first node of the inductor and the drain of the HV NMOS switch. The capacitor has a first node coupled to a cathode of the diode, and a second node coupled to the ground.
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