Structured silicon-based thermal emitter
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United States of America Patent
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Oct 17, 2017
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Jul 6, 2016
filing date -
Jul 10, 2015
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Abstract
An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.
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