Ferroelectric film and method for manufacturing the same

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United States of America Patent

PATENT NO 9793464
APP PUB NO 20170025597A1
SERIAL NO

15288056

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Abstract

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To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below

description='In-line Formulae' end='lead'0.3≦X≦0.7.description='In-line Formulae' end='tail'

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Patent Owner(s)

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KRYSTAL INC2-1-17 ASUTOPIA UBE-SHI YAMAGUCHI 755-0152

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Honda, Yuuji Chiba, JP 53 491
Kijima, Takeshi Chiba, JP 167 1581

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