Growth layer for photovoltaic applications

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United States of America Patent

PATENT NO 9793420
SERIAL NO

13261697

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Abstract

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Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.

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Patent Owner(s)

Patent OwnerAddress
PILKINGTON GROUP LIMITEDLATHOM NR ORMSKIRK LANCASHIRE L40 5UF

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mcsporran, Neil Perrysburg, US 19 81

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