Preparing a semiconductor surface for epitaxial deposition

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United States of America Patent

PATENT NO 9793104
SERIAL NO

15008663

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Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.

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Patent Owner(s)

Patent OwnerAddress
AIXTRON SEDORNKAULSTRA¿E 2 HERZOGENRATH 52134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dunham, Scott Fremont, US 4 175
Huynh, Tac van Fremont, US 1 2
Kelman, Maxim Mountain View, US 37 986
Khandan, Shahab Pleasanton, US 7 239
Teo, Kenneth B K Great Cambourne, GB 12 23

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