Programming of non-volatile memory subjected to high temperature exposure
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United States of America Patent
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Oct 17, 2017
Grant Date -
Mar 16, 2017
app pub date -
Sep 14, 2016
filing date -
Sep 15, 2015
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Abstract
A memory device having features of the present invention comprises a reprogrammable memory portion including therein a first plurality of magnetic tunnel junctions (MTJs) whose resistance is switchable; and a one-time-programmable (OTP) memory portion including therein a second plurality of MTJs whose resistance is switchable and a third plurality of MTJs whose resistance is fixed. Each MTJ of the first, second, and third plurality of MTJs includes a magnetic free layer having a magnetization direction substantially perpendicular to a layer plane thereof and a magnetic reference layer having a fixed magnetization direction substantially perpendicular to a layer plane thereof. The second plurality of MTJs represents one of two logical states and the third plurality of MTJs represents the other one of the two logical states.
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