Operation of double-base bipolar transistors with additional timing phases at switching transitions
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United States of America Patent
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Oct 10, 2017
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Sep 15, 2016
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Nov 18, 2014
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Abstract
Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.
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