Floating-gate transistor photodetector
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 10, 2017
Issued Date -
N/A
app pub date -
Apr 5, 2016
filing date -
Mar 14, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A field effect transistor photodetector that can operate in room temperature includes a source electrode, a drain electrode, a channel to allow an electric current to flow between the drain and source electrodes, and a gate electrode to receive a bias voltage for controlling the current in the channel. The photodetector includes a light-absorbing material that absorbs light and traps electric charges. The light-absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges. The one or more charges held in the light-absorbing material reduces the current flowing through the channel.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully