Method of anodising a surface of a semiconductor device

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United States of America Patent

PATENT NO 9786808
SERIAL NO

14780047

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Abstract

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The present disclosure provides a method of anodizing a surface of a semiconductor device comprising a p-n junction. The method comprises exposing a first surface portion of the semiconductor device to an electrolytic solution that is suitable for anodizing the first surface portion when an electrical current is directed through a region at the first surface portion. Further, the method comprises exposing a portion of the semiconductor device to electromagnetic radiation in a manner such that the electromagnetic radiation induces the electrical current and the first surface portion anodizes.

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Patent Owner(s)

Patent OwnerAddress
NEWSOUTH INNOVATIONS PTY LIMITEDRUPERT MYERS BUILDING GATE 14 BARKER STREET THE UNIVERSITY OF NEW SOUTH WALES SYDNEY NEW SOUTH WALES 2052 AUSTRALIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cui, Jie Rosebury, AU 765 1905
Wang, Xi Kingsford, AU 356 3114

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