Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
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United States of America Patent
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Oct 10, 2017
Grant Date -
Oct 3, 2013
app pub date -
Mar 15, 2013
filing date -
Mar 29, 2012
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Abstract
To increase the on-state current of a transistor whose channel is formed in an oxide semiconductor layer. To provide a transistor where a resistance-reducing element is introduced into a region of an oxide semiconductor layer which overlaps with part of a source or drain or part of a gate. For example, the thickness of a region of a conductive layer serving as a source or drain or a gate (at least part of a region overlapping with an oxide semiconductor layer) is made smaller than that of the other region of the conductive layer. A resistance-reducing element is introduced into the oxide semiconductor layer through the conductive layer thinned partly, thereby obtaining the oxide semiconductor layer where the resistance-reducing element is introduced into the region overlapping with part of the source or drain or part of the gate. Thus, the on-state current of the transistor can be increased.
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