Thin-substrate double-base high-voltage bipolar transistors
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United States of America Patent
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Oct 10, 2017
Grant Date -
Sep 15, 2016
app pub date -
Jan 11, 2016
filing date -
Jan 9, 2015
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Abstract
B-TRAN bipolar power transistor devices and methods, using a drift region which is much thinner than previously proposed double-base bipolar transistors of comparable voltage. This is implemented in a high-bandgap semiconductor material (preferably silicon carbide). Very high breakdown voltage, and fast turn-off, are achieved with very small on-resistance.
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