Gate electrode of a semiconductor device, and method for producing same
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United States of America Patent
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Oct 10, 2017
Grant Date -
Sep 17, 2015
app pub date -
Aug 22, 2013
filing date -
Aug 29, 2012
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Abstract
A semiconductor device includes a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode having a metal layer, a metal oxide layer and a silicon layer containing a dopant, provided sequentially on the gate insulating film; and a transistor having a gate insulating film and a gate electrode.
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