Self-aligned dual trench device
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United States of America Patent
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Oct 10, 2017
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N/A
app pub date -
Jul 13, 2015
filing date -
Jul 13, 2015
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Abstract
A power MOSFET or a power rectifier may be fabricated according to the invention to include a gate trench and a field plate trench. Both trenches can be formed with a two-step etching process as described in detail in the specification. The devices that embody this invention can be fabricated with higher packaging density and better and more tightly distributed device parameters such as the VF, RDSS, and BV.
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