Semiconductor device having a voltage resistant structure

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United States of America Patent

PATENT NO 9786749
SERIAL NO

15279453

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Abstract

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A semiconductor device having a voltage resistant structure in a first aspect of the present invention is provided, comprising a semiconductor substrate, a semiconductor layer on the semiconductor substrate, a front surface electrode above the semiconductor layer, a rear surface electrode below the semiconductor substrate, an extension section provided to a side surface of the semiconductor substrate, and a resistance section electrically connected to the front surface electrode and the rear surface electrode. The extension section may have a lower permittivity than the semiconductor substrate. The resistance section may be provided to at least one of the upper surface and the side surface of the extension section.

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Patent Owner(s)

Patent OwnerAddress
OCTEC INCTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iguchi, Kenichi Matsumoto, JP 33 84
Nakazawa, Haruo Matsumoto, JP 46 317
Okumura, Katsuya Tokyo, JP 337 7835
Seki, Yasukazu Matsumoto, JP 23 339
Yoshikawa, Koh Matsumoto, JP 51 426

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