METHOD FOR REDUCING CONTACT RESISTANCE
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United States of America Patent
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Feb 13, 2017
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Apr 12, 2016
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Abstract
Disclosed is a method for reducing contact resistance, including depositing a GST layer on an InGaAs substrate, generating an InGaAs/GST/Ni stacked structure by depositing a Ni layer on the GST layer, and thermally treating the stacked structure to rearrange components of the GST layer and to generate a Ni-InGaAs alloy.
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