Method of reading an electronic memory device including a plurality of memory cells of resistive random access memory type
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United States of America Patent
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Oct 10, 2017
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app pub date -
Jun 16, 2016
filing date -
Jun 16, 2015
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Abstract
A method for reading an electronic memory device including N memory cells Ci with 1≧i≧N and N≧2, each cell Ci having a resistance Ri, the method including for each cell Ci, determining a set Ei of resistance values capable of being associated with the resistance Ri of the cell Ci; for each combination of N variables Vi, each variable Vi taking successively each resistance value among the predetermined set Ei, applying a mathematical function to the combination to obtain a resulting resistance value; for each combination of N variables Vi, associating a logic state of the electronic memory device with the resulting resistance value obtained previously, according to a comparison of the resulting resistance value with a same threshold resistance value; associating a resistance value with each resistance Ri to obtain a particular combination of N variables Vi; determining the logic state of the electronic memory device.
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