Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus
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United States of America Patent
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Oct 10, 2017
Grant Date -
Jul 9, 2015
app pub date -
Jul 15, 2013
filing date -
Jul 18, 2012
priority date (Note) -
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Abstract
A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.
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